| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
438,000 pcs
|
438000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
320 pcs
|
320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJX3008RTF is an NPN pre-biased bipolar junction transistor manufactured by On Semiconductor. Pre-biased transistors integrate bias resistors directly into the device, reducing external component count and simplifying PCB layout.
Key electrical specifications include a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 200mW. The device offers a typical transition frequency of 250MHz and a minimum DC current gain (hFE) of 56 at 5mA collector current and 5V Vce. The collector-emitter saturation voltage is 300mV maximum at a base current of 500µA and collector current of 10mA. The integrated base resistor has a nominal value of 22kΩ.
The FJX3008RTF is housed in a surface-mount SOT-323 package (SC-70 case style), suitable for automated assembly in compact electronic designs. It is commonly used in switching and amplifier applications where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 27,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 50V.
The maximum collector current (Ic) is 100mA.
The maximum power dissipation (Pd) is 200mW.
The FJX3008RTF is available in a surface-mount SOT-323 package (SC-70 case style).
The integrated base resistor has a nominal value of 22kΩ.
The typical transition frequency (ft) is 250MHz.
The minimum DC current gain (hFE) is 56 at Ic=5mA and Vce=5V.
