| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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904,000 pcs
|
904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
72,880 pcs
|
72880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJV4114RMTF is a PNP pre-biased bipolar junction transistor (BJT) manufactured by On Semiconductor. Pre-biased transistors integrate bias resistors directly into the device package, reducing component count and simplifying circuit design. This device includes a 47 kΩ base resistor (R1) and is designed for low-current switching and amplification applications.
Electrical characteristics include a maximum collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a power dissipation limit of 200 mW. The minimum DC current gain (hFE) is 68 at 5 mA collector current and 5 V collector-emitter voltage, while the maximum saturation voltage is 300 mV at 500 µA base current and 10 mA collector current. The typical transition frequency is 200 MHz, making the device suitable for moderate-speed signal processing.
This transistor is housed in a compact SOT-23-3 surface-mount package (also designated TO-236-3 or SC-59). The surface-mount design is ideal for high-density PCB layouts and automated assembly processes. The device is commonly used in interface circuits, driver stages, and logic-level shifting where integrated biasing simplifies design.
On Semiconductor's pre-biased transistor family offers consistent performance and reliability for consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 27,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 V.
The transistor is available in SOT-23-3 surface-mount package, also designated as TO-236-3 and SC-59.
The part is reported as RoHS3 compliant in existing data, but this status is unverified.
The maximum collector current is 100 mA.
The maximum power dissipation is 200 mW.
The integrated base resistor R1 has a nominal value of 47 kΩ.
The minimum hFE is 68 at a collector current of 5 mA and collector-emitter voltage of 5 V.
