| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
477,920 pcs
|
477920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJV3110RMTF-ON is an NPN pre-biased bipolar junction transistor from onsemi. It integrates a 10kΩ base resistor, which simplifies circuit design by reducing external components.
The transistor is rated for 40V collector-emitter voltage and 100mA continuous collector current. At Ic=1mA and Vce=5V, the minimum DC current gain is 100; the maximum saturation voltage is 300mV at Ib=1mA and Ic=10mA. The transition frequency is 250MHz.
The device is supplied in a SOT-23-3 surface-mount package and is also available in TO-236-3 and SC-59 package variants. Maximum power dissipation is 200mW.
Pre-biased transistors are suitable for low-power switching and amplification. The SOT-23-3 footprint supports high-density PCB layouts.
| Qty | Low | High |
|---|---|---|
| 6,667+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is rated at 40V.
The continuous collector current is 100mA.
It is available in TO-236-3, SC-59, and SOT-23-3 surface-mount packages (supplier device package SOT-23-3).
The part is marked RoHS3 compliant, though this is unverified (low confidence).
The integrated base resistor is 10kΩ.
The transition frequency (fT) is 250MHz.
Minimum hFE is 100 at Ic=1mA, Vce=5V.
