FJV3110RMTF

The FJV3110RMTF is an NPN pre-biased bipolar junction transistor manufactured by ON Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count. Key electrical characteristics include a collector current rating of 100mA, a collector-emitter voltage of 40V, and a power dissipation of 200mW. The transistor offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V Vce, with a maximum Vce saturation voltage of 300mV at 1mA base current and 10mA collector current. It has a transition frequency of 250MHz, making it suitable for low-frequency switching and amplification applications.

The device is housed in a surface-mount SOT-23-3 package (also available as TO-236-3 and SC-59), which is ideal for space-constrained designs. It is designed for general-purpose switching and amplification in low-power circuits. The pre-biased configuration reduces board space and component count, enhancing reliability. The FJV3110RMTF is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified and should be confirmed with the manufacturer.