FJV3105RMTF The FJV3105RMTF is an NPN pre-biased transistor from On Semiconductor. It is rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V.
Mfr Part #:

FJV3105RMTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FJV3105RMTF is an NPN pre-biased transistor from On Semiconductor. It is rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V.
✓ Total Stock: 6,532,102 pcs
$ Price Range: $0.01

FJV3105RMTF Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,530,341 pcs
6530341 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,761 pcs
1761 pcs On Request 1 On Request On Request 1823+ On Request On Request

FJV3105RMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJV3105RMTF Description

Short technical summary and product information.

The FJV3105RMTF is an NPN pre-biased small signal bipolar transistor manufactured by On Semiconductor. It features an integrated base resistor of 10 kΩ, simplifying circuit design by reducing external component count. The device is rated for a collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V.

 

Electrical characteristics include a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage. The maximum Vce saturation voltage is 300 mV at a base current of 500 µA and collector current of 10 mA. The transition frequency (ft) is 250 MHz, making it suitable for switching and amplification applications up to VHF frequencies.

 

The transistor is housed in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59. It has a maximum power dissipation of 200 mW. The device is RoHS3 compliant and has an MSL of Level 1 (unlimited).

FJV3105RMTF Quick Information

Product Type: Bipolar Transistor
Canonical Name: FJV3105RMTF NPN Pre-Biased Transistor
Subcategory: Single Bipolar Transistor

FJV3105RMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FJV3105RMTF Estimated Pricing

Qty Low High
60,000+ $0.01 $0.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJV3105RMTF Features

  • NPN pre-biased transistor with 10 kΩ base resistor.
  • Rated for 100 mA collector current and 50 V breakdown.
  • Surface-mount SOT-23-3 package for compact designs.
  • 250 MHz transition frequency for VHF applications.
  • RoHS3 compliant with MSL Level 1.

FJV3105RMTF Applications

  • Suitable for low-power switching circuits.
  • Used in signal amplification up to VHF frequencies.
  • Ideal for space-constrained surface-mount designs.
  • Reduces component count with integrated bias resistor.

FJV3105RMTF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector current rating of the FJV3105RMTF?

The maximum collector current (Ic) is 100 mA.

What is the collector-emitter breakdown voltage of the FJV3105RMTF?

The collector-emitter breakdown voltage (Vceo) is 50 V.

What package is the FJV3105RMTF available in?

The device is available in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the power dissipation of the FJV3105RMTF?

The maximum power dissipation (Pd) is 200 mW.

What is the transition frequency of the FJV3105RMTF?

The transition frequency (ft) is 250 MHz.

Is the FJV3105RMTF RoHS compliant?

Yes, the device is listed as RoHS3 compliant.

FJV3105RMTF Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
FJV3102RMTF
FJV3102RMTF
On Semiconductor
NPN pre-biased transistor with 50V collector-emitter voltage and 100mA collector current. Features built-in 10kΩ base resistor in SOT-23-3 surface mount package.
View Part
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