| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,530,341 pcs
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6530341 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,761 pcs
|
1761 pcs | On Request | 1 | On Request | On Request | 1823+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The FJV3105RMTF is an NPN pre-biased small signal bipolar transistor manufactured by On Semiconductor. It features an integrated base resistor of 10 kΩ, simplifying circuit design by reducing external component count. The device is rated for a collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V.
Electrical characteristics include a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage. The maximum Vce saturation voltage is 300 mV at a base current of 500 µA and collector current of 10 mA. The transition frequency (ft) is 250 MHz, making it suitable for switching and amplification applications up to VHF frequencies.
The transistor is housed in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59. It has a maximum power dissipation of 200 mW. The device is RoHS3 compliant and has an MSL of Level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 60,000+ | $0.01 | $0.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 100 mA.
The collector-emitter breakdown voltage (Vceo) is 50 V.
The device is available in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).
The maximum power dissipation (Pd) is 200 mW.
The transition frequency (ft) is 250 MHz.
Yes, the device is listed as RoHS3 compliant.