FJV3105RMTF
On Semiconductor
The FJV3105RMTF is an NPN pre-biased transistor from On Semiconductor. It is rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V.
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84,956 pcs
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84956 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0923+ | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJV3102RMTF is an NPN pre-biased bipolar junction transistor manufactured by On Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 200mW.
Electrical characteristics include a minimum DC current gain (hFE) of 30 at Ic=5mA and Vce=5V, and a maximum Vce saturation voltage of 300mV at Ib=500µA and Ic=10mA. The transition frequency is 250MHz, making it suitable for low-frequency switching and amplification applications.
The device is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), which is ideal for compact PCB layouts. It is commonly used in low-power switching, signal amplification, and interface circuits in consumer electronics and portable devices.
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| 51,000+ | $0.01 | $0.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FJV3102RMTF is available in a SOT-23-3 surface mount package (also TO-236-3, SC-59).
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum collector-emitter voltage is 50V.
The maximum collector current is 100mA.
The integrated base resistor is 10kΩ.
The minimum DC current gain is 30 at Ic=5mA, Vce=5V.
The maximum power dissipation is 200mW.