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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,000 pcs
|
13000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJP3307DTU is an NPN bipolar junction transistor designed for high-voltage switching and amplification applications. It features a collector-emitter voltage rating of 400V, a collector current rating of 8A, and a power dissipation of 80W.
The device provides a minimum DC current gain (hFE) of 8 at a collector current of 2A and a collector-emitter voltage of 5V. The maximum collector-emitter saturation voltage is 3V at a base current of 2A and collector current of 8A. The maximum junction temperature is specified at 150°C.
Packaged in a TO-220-3 through-hole package, the FJP3307DTU is suitable for designs requiring robust thermal performance with appropriate heatsinking. Its through-hole mounting aids in mechanical stability and thermal conductivity in power circuits.
This transistor is appropriate for power supply, inverter, and motor control circuits where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is rated at 400V.
The collector current (Ic) is rated at 8A.
The power dissipation (Pd) is rated at 80W.
The minimum hFE is 8, measured at Ic=2A and Vce=5V.
The FJP3307DTU is available in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 compliant in existing data, but this status is unverified.
