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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJP13007TU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for high-voltage switching applications, featuring a collector-emitter breakdown voltage of 400V and a collector current rating of 8A.
The device can dissipate up to 80W of power and has a transition frequency of 4MHz. The minimum DC current gain is 8 at a collector current of 2A and collector-emitter voltage of 5V. The maximum collector-emitter saturation voltage is 3V at a base current of 2A and collector current of 8A.
Packaged in a TO-220-3 through-hole package, the FJP13007TU is suitable for power switching circuits, power supplies, and other applications requiring high voltage and current handling. The maximum junction operating temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 400V.
The maximum collector current (IC) is 8A.
The power dissipation (Pd) is 80W.
The FJP13007TU is available in a TO-220-3 through-hole package.
The maximum junction operating temperature is 150°C.
The minimum DC current gain (hFE) is 8 at IC=2A and VCE=5V.
The maximum collector-emitter saturation voltage is 3V at IB=2A and IC=8A.