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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH40T65SPD-F085 is an NPT (Non-Punch Through) IGBT from On Semiconductor, designed for high-efficiency power switching applications. It offers a collector-emitter voltage rating of 650V and a continuous collector current of 80A, with a power dissipation of 267W. The device features a low saturation voltage of 2.4V (max) at Vge=15V and Ic=40A, contributing to reduced conduction losses.
Key switching characteristics include an on-state switching energy of 1.16mJ and off-state energy of 270µJ (tested at 400V, 40A, 6Ω gate resistance). Turn-on delay time is 18ns and turn-off delay time is 35ns, enabling efficient operation at moderate frequencies. The gate charge is 36nC, allowing for simple gate drive requirements.
The IGBT is housed in a standard TO-247-3 through-hole package, suitable for mounting on heatsinks. It has a junction temperature range of -55°C to 175°C, making it suitable for demanding thermal environments. The device is RoHS compliant and REACH unaffected, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 360+ | $1.48 | $1.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) rating is 650V.
The maximum continuous collector current (Ic) is 80A.
The device is packaged in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 175°C.
Yes, the part is listed as RoHS3 compliant, but this status is unverified.
The gate charge (Qg) is 36 nC.
The turn-on energy is 1.16 mJ and turn-off energy is 270 µJ at 400V, 40A, 6Ω gate resistance.