TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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5,943 pcs
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5943 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The FDZ291P is a P-Channel MOSFET manufactured by N-A, utilizing their advanced 1.5V specified PowerTrench process combined with state-of-the-art BGA packaging. This design aims to minimize both PCB space and RDS(ON).
Key electrical characteristics include a P-Channel configuration, a 1.5V Gate-Source Voltage specification, and a -20V Drain-Source Voltage rating. The device is housed in a BGA package, indicating a compact footprint suitable for space-constrained applications.
This MOSFET embodies a breakthrough in packaging technology, enabling reduced size and improved performance. Its design is optimized for low-voltage core ICs, particularly in portable systems where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDZ291P is a P-Channel MOSFET.
The Drain-Source Voltage rating for the FDZ291P is -20V.
The specified Gate-Source Voltage for the FDZ291P is 1.5V.
The FDZ291P uses a BGA package.