TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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2,418 pcs
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2418 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDV301N is an N-Channel logic level enhancement mode field effect transistor manufactured by NXP Semiconductors. It utilizes a high cell density DMOS technology optimized for low on-state resistance. This MOSFET offers a breakdown voltage of 25V and a continuous drain current rating of 220mA.
Key electrical characteristics include a maximum RDS(on) of 4Ω and an input capacitance of 9.5pF. The device has a fast rise time of 6ns. It is designed for surface mounting in a compact SOT-23 package.
With a maximum power dissipation of 350mW and an operating temperature range from -55°C to 150°C, the FDV301N is suitable for a variety of applications requiring efficient switching and low on-resistance in a small form factor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
220mA.
SOT-23.
-55°C to 150°C.
4Ω.
9.5pF.