| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,680 pcs
|
1680 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel | |
| Tape Width |
The FDS6986S from Fairchild Semiconductor is a dual N-channel PowerTrench MOSFET designed to enhance efficiency in synchronous DC:DC power supplies for notebook computers and battery-powered devices. This component replaces two single SO-8 MOSFETs and a Schottky diode.
The device contains two unique 30V, N-channel, logic-level MOSFETs. The high-side switch (Q1) is optimized for low switching losses, while the low-side switch (Q2) is optimized for reduced conduction losses. Q2 integrates a Schottky diode using Fairchild's SyncFET technology.
Key electrical characteristics include a drain-source voltage of 30V. For Q2, continuous drain current is 7.9A with a typical R DS(on) of 20 mΩ at VGS = 10V. For Q1, continuous drain current is 6.5A with a typical R DS(on) of 29 mΩ at VGS = 10V. The operating and storage junction temperature range is -55 to +150°C.
The FDS6986S is supplied in an SO-8 package, suitable for surface mounting. It is available on a 13-inch reel with a 12mm tape width, containing 2500 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for both channels of the FDS6986S is 30V.
The typical R DS(on) for the low-side switch (Q2) at VGS = 10V is 20 mΩ.
The typical R DS(on) for the high-side switch (Q1) at VGS = 10V is 29 mΩ.
The operating and storage junction temperature range is -55 to +150°C.
The FDS6986S is supplied in an SO-8 package.
A standard package reel contains 2500 units.
The RoHS status is RoHS3 Compliant.