| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,623 pcs
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1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE4435 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, operating with gate voltages as low as 4.5V. Key electrical specifications include a Drain-Source Voltage of -30V and a Continuous Drain Current of -9.1A at 25℃.
This MOSFET exhibits an RDS(ON) of less than 35mΩ at VGS=-4.5V and less than 20mΩ at VGS=-10V. It has a maximum power dissipation of 3.1W and a junction-to-ambient thermal resistance of 40℃/W. The operating junction and storage temperature range is -55℃ to 150℃.
The NCE4435 is housed in a surface-mount SOP-8 package. It is suitable for applications such as battery switches, load switches, and general power management.
Dynamic characteristics include an input capacitance of 1600pF, output capacitance of 350pF, and reverse transfer capacitance of 300pF. Switching characteristics are also detailed, with turn-on delay time at 10nS and turn-off fall time at 70nS.
-30V
-9.1A at 25℃
21mΩ
SOP-8
-55℃ to 150℃