TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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74,746 pcs
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74746 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI7946DP-T1-E3 from Vishay Siliconix is a dual N-channel MOSFET designed for surface mount applications. This component features a breakdown voltage of 150V and can handle a continuous drain current of 2.1A at 25°C. It has a maximum power dissipation of 1.4W.
The MOSFET is housed in a PowerPAK® SO-8 Dual package, suitable for surface mounting. Its N-channel configuration and robust specifications make it a versatile component for various electronic circuits requiring efficient switching and power management.
This device is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as low confidence without verified documentation. The component is part of the FET, MOSFET Arrays category.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 150V.
The continuous drain current is 2.1A at 25°C.
It is an N-Channel MOSFET.
The maximum power dissipation is 1.4W.
It is supplied in a PowerPAK® SO-8 Dual package for surface mounting.