| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,628 pcs
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1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | 18+;17+ | On Request | On Request |
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The FDMQ8205A from On Semiconductor is part of the GreenBridge 2 series, offering a high-efficiency alternative to conventional diode bridges. This device is configured with low rDS(on) dual P-channel and N-channel MOSFETs, significantly reducing power loss compared to diode bridges. This design maximizes available power and voltage while eliminating thermal design problems, making it ideal for Power over Ethernet (PoE) Power Device (PD) applications.
The FDMQ8205A is compatible with IEEE802.3af/at and 3bt PoE standards, meeting detection and classification requirements with small backfeed voltage. It operates within a temperature range of -40°C to 85°C and is housed in a compact 12-MLP (5x4.5) package, specifically a 12-WDFN Exposed Pad, suitable for surface mounting.
Key electrical characteristics include a voltage rating of 57V and a typical current rating of 400 µA. The device incorporates self-driving circuitry for the MOSFETs. Its construction as a Pb-Free device further enhances its suitability for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
57V.
400µA.
12-MLP (5x4.5mm).
-40°C to 85°C.
IEEE802.3af/at and 3bt.
N and P-Channel.
Power Over Ethernet (PoE) systems.