| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The FDG6322C is a Dual N & P Channel Digital FET manufactured by NA. This device is designed for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs.
Key electrical specifications include a 25V N-channel drain-source voltage and -25V P-channel drain-source voltage. The continuous drain current for the N-channel is 0.22A and for the P-channel is -0.41A. The maximum power dissipation is 0.3W.
This FET operates within a temperature range of -55 to 150°C. It features a very low level gate drive requirement, allowing direct operation in 3V circuits. The device is housed in a very small SC70-6 package, suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel drain-source breakdown voltage is 25V.
The P-channel drain-source breakdown voltage is -25V.
The maximum continuous drain current for the N-channel is 0.22A.
The maximum continuous drain current for the P-channel is -0.41A.
The operating and storage temperature range is -55 to 150°C.
The FDG6322C is in an SC70-6 package.
The N-channel gate threshold voltage is a maximum of 1.5V.
