E3M0060065K The E3M0060065K is a 650V N-channel silicon carbide power MOSFET from Wolfspeed, rated for 37A continuous drain current at 25°C. It features a low 79mΩ maximum on-resistance and comes in a TO-247-4L through-hole package.
Mfr Part #:

E3M0060065K

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
The E3M0060065K is a 650V N-channel silicon carbide power MOSFET from Wolfspeed, rated for 37A continuous drain current at 25°C. It features a low 79mΩ maximum on-resistance and comes in a TO-247-4L through-hole package.
Total Stock: 22,685 pcs
$ Price Range: $10.02 - $18.64

E3M0060065K Available from 1 distributor

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E3M0060065K Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

E3M0060065K Description

Short technical summary and product information.

The E3M0060065K from Wolfspeed is an N-channel silicon carbide (SiC) power MOSFET designed for high-voltage, high-efficiency power conversion. It is rated for a maximum drain-source voltage of 650V and a continuous drain current of 37A at 25°C (26A at 100°C). The device uses third-generation SiC MOSFET technology to achieve low conduction and switching losses.

 

The MOSFET offers a typical on-resistance of 60mΩ and a maximum of 79mΩ at 15V gate drive. Its low gate charge (49nC) and low capacitances (input 1170pF, output 72pF, reverse transfer 6pF) support high-speed switching. The recommended gate-drive voltage is +15V for on-state and -4V to 0V for off-state, with an absolute maximum gate-source voltage of -8V to +19V.

 

The E3M0060065K is housed in a TO-247-4L through-hole package with a separate driver source pin, which helps reduce gate-loop inductance. The part is automotive qualified per AEC-Q101 and is RoHS3 compliant and halogen-free. It is intended for applications such as electric vehicle battery chargers and high-voltage DC/DC converters.

E3M0060065K Quick Information

Product Type: Silicon Carbide Power MOSFET
Series: E3
Canonical Name: 650V N-Channel SiC Power MOSFET
Subcategory: Single MOSFET

E3M0060065K Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

E3M0060065K Estimated Pricing

Qty Low High
1+ $18.64 $18.64
30+ $11.57 $11.57
60+ $10.73 $10.73
120+ $10.02 $10.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

E3M0060065K Features

  • AEC-Q101 qualified for automotive applications.
  • Low 79mΩ maximum on-resistance at 15V.
  • 650V drain-source voltage and 37A current.
  • Fast switching with 49nC gate charge.

E3M0060065K Applications

  • Suitable for EV battery chargers.
  • Ideal for high-voltage DC/DC converters.
  • Used in automotive power systems.

E3M0060065K FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the E3M0060065K?

The maximum drain-source voltage is 650V.

What package is the E3M0060065K available in?

It is available in a TO-247-4L through-hole package (TO-247-4 case).

What is the operating junction temperature range?

The operating junction temperature range is -40°C to +175°C.

Is the E3M0060065K RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free.

What is the continuous drain current rating?

The continuous drain current is 37A at Tc=25°C and 26A at Tc=100°C.

Is the E3M0060065K qualified for automotive applications?

Yes, it is AEC-Q101 automotive qualified.

What is the on-resistance of the E3M0060065K?

The typical on-resistance is 60mΩ, with a maximum of 79mΩ at VGS=15V.

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