K4B4G1646E-BYK0
Samsung Electronics
The Samsung K4B4G1646E-BYK0 is a DRAM chip featuring DDR3L SDRAM technology. It offers a 4Gbit capacity and operates at 1.5V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 1903+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| SVHC Present |
The DS26518GN+ by MAX is a Telecom Integrated Circuit (IC). This component is designed for telecommunications applications.
Key specifications include RoHS3 compliance, indicating adherence to environmental standards for hazardous substances. The REACH status is noted as unaffected, and the Moisture Sensitivity Level (MSL) is rated as 1, which signifies unlimited shelf life under recommended storage conditions.
This IC falls under the broader category of Interface ICs, specifically within the Telecom subcategory. Its designation suggests suitability for various communication systems and networking equipment where reliable signal processing and data transmission are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DS26518GN+ is RoHS3 Compliant.
The MSL for DS26518GN+ is 1 Unlimited.
The REACH status for DS26518GN+ is REACH Unaffected.