| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The DCX51-16 from Diodes Incorporated is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks. It is housed in a SOT89-3L surface mount package, making it suitable for automated assembly processes.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -45V and a continuous collector current (IC) of up to 1A. The device offers a typical DC current gain (hFE) of 63 at -5mA and 40 at -500mA, with a current gain-bandwidth product (fT) of 200MHz. The maximum collector-emitter saturation voltage (VCE(SAT)) is -0.5V at -500mA/ -50mA.
This transistor operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1W at 25°C. The terminals are finished with matte tin over a copper leadframe, suitable for soldering per MIL-STD-202, Method 208. The part is noted as obsolete, with BCX5316TA suggested as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -45V.
The transistor is available in a SOT89-3L surface-mount package.
The operating and storage temperature range is -55°C to +150°C.
At -150mA collector current and -2V Vce, hFE ranges from 100 to 250.
Yes, the datasheet marks this part as obsolete. The suggested replacement is the BCX5316TA from Diodes Incorporated.
Maximum power dissipation is 1W at 25°C ambient temperature.
The typical current gain-bandwidth product (fT) is 200MHz at -50mA, -5V, 100MHz test frequency.