| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
927 pcs
|
927 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Tape & Reel |
The Texas Instruments CSD18537NQ5A is a 60V, N-Channel NexFET™ Power MOSFET designed to minimize losses in power conversion applications. It offers an ultra-low Qg and Qgd, along with low thermal resistance and avalanche rating.
Key electrical specifications include a drain-to-source voltage (VDS) of 60V and a gate-to-source voltage (VGS) of ±20V. The on-state resistance (RDS(on)) is typically 13 mΩ at VGS = 6V and 10 mΩ at VGS = 10V. The total gate charge (Qg) is 14 nC typical, and the gate-to-drain charge (Qgd) is 2.3 nC typical. The threshold voltage (VGS(th)) is 3V typical.
Absolute maximum ratings include a continuous drain current (ID) of 50A (package limited) and 54A (silicon limited) at 25°C. The pulsed drain current (IDM) is 151A. Power dissipation (PD) is rated at 75W at 25°C. The operating junction and storage temperature range is -55°C to 150°C.
This MOSFET is housed in a compact SON 5 mm x 6 mm plastic package, suitable for surface mounting. It is Pb-Free and Halogen Free compliant, making it suitable for various power management applications such as high-side synchronous buck converters and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The typical on-state resistance at VGS = 10V is 10 mΩ.
The typical total gate charge is 14 nC.
The package type is SON 5 x 6 mm.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.