| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,622 pcs
|
4622 pcs | On Request | 1 | On Request | On Request | 2040+5 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The Texas Instruments CSD17501Q5A is an N-Channel NexFET™ Power MOSFET with a 30V drain-to-source voltage rating. It is optimized for power conversion applications, offering ultralow gate charge (Qg) and gate-to-drain charge (Qgd), which contribute to reduced switching losses.
Key electrical characteristics include a typical on-state resistance of 3 mΩ at VGS = 4.5V and 2.4 mΩ at VGS = 10V. The device has a typical gate threshold voltage of 1.3V and a total gate charge of 13.2 nC at VGS = 4.5V. The continuous drain current is rated at 100A at TC = 25°C.
This MOSFET is housed in a compact SON 5-mm × 6-mm plastic package, suitable for surface mounting. It is designed for applications such as point-of-load synchronous buck converters in networking, telecom, and computing systems. The device also boasts low thermal resistance and is avalanche rated.
Compliance includes Pb Free and Halogen Free status. The operating temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30 V.
The device is housed in a surface-mount SON 5-mm × 6-mm package.
The operating junction and storage temperature range is -55°C to 150°C.
The continuous drain current is 100 A at TC = 25°C.
The typical on-resistance is 2.4 mΩ at VGS = 10V.
Yes, the gate threshold voltage is typically 1.3V, allowing logic-level drive.