CSD16409Q3 The Texas Instruments CSD16409Q3 is an N-Channel NexFET™ Power MOSFET designed for power conversion applications. It offers a 25V drain-to-source voltage and a continuous drain current of 60A.
Mfr Part #:

CSD16409Q3

Available from 6 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments CSD16409Q3 is an N-Channel NexFET™ Power MOSFET designed for power conversion applications. It offers a 25V drain-to-source voltage and a continuous drain current of 60A.
✓ Total Stock: 276,278 pcs
$ Price Range: $0.31

CSD16409Q3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

CSD16409Q3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Power Dissipation
Tape & Reel

CSD16409Q3 Description

Short technical summary and product information.

The Texas Instruments CSD16409Q3 is an N-Channel NexFET™ Power MOSFET engineered to minimize losses in power conversion applications. It features a drain-to-source voltage (VDS) of 25V and a maximum continuous drain current (ID) of 60A at 25°C.

 

Key electrical characteristics include a low on-state resistance (RDS(on)) of 12.4 mΩ at VGS = 4.5V and 6.2 mΩ at VGS = 10V. The device also boasts ultra-low gate charge (Qg) of 4 nC and gate-to-drain charge (Qgd) of 1 nC, optimizing switching performance.

 

This MOSFET is housed in a compact SON 3.3mm x 3.3mm plastic package, suitable for surface mount applications. It is designed for use in point-of-load synchronous buck converters for networking, telecom, and computing systems, and is optimized for control FET applications.

 

The CSD16409Q3 operates within a junction and storage temperature range of -55°C to 150°C and is Pb-free and RoHS compliant.

CSD16409Q3 Quick Information

Product Type: N-Channel NexFET™ Power MOSFET
Canonical Name: Texas Instruments CSD16409Q3 N-Channel NexFET™ Power MOSFET
Subcategory: N-Channel

CSD16409Q3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

CSD16409Q3 Estimated Pricing

Qty Low High
1+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD16409Q3 Features

  • Ultra low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Pb free terminal plating.
  • SON 3.3mm x 3.3mm plastic package.

CSD16409Q3 Applications

  • Point-of-load synchronous buck converters.
  • Applications in networking systems.
  • Applications in telecom systems.
  • Applications in computing systems.
  • Optimized for control FET applications.

CSD16409Q3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the CSD16409Q3?

The maximum drain-to-source voltage is 25 V.

What are the gate-to-source voltage limits?

The maximum gate-to-source voltage is +16 V, and the minimum is -12 V.

What continuous drain current can the CSD16409Q3 handle?

It is rated up to 60 A at TC = 25°C, and up to 15 A on a 1 in² copper FR4 board under stated datasheet conditions.

What is the maximum on-resistance at 4.5 V gate drive?

The maximum on-resistance at VGS = 4.5 V is 12.4 mΩ.

What is the operating temperature range?

The operating junction and storage temperature range is -55 °C to 150 °C.

What package is the CSD16409Q3 available in?

It is available in a SON package.

What is the total gate charge of the CSD16409Q3?

The typical total gate charge is 4 nC.

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