| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance | |
| Vgs(th) (Max) @ Id |
The Central Semiconductor Corp CMKDM8005 TR PBFREE is a dual P-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 650mA.
This MOSFET offers very low Rds(on) values, with a maximum of 360mOhm at 350mA and 4.5V Vgs. It also has a low threshold voltage, with a maximum of 1V at 250µA, making it logic level compatible. The device has a power dissipation of 350mW and an operating temperature range of -65°C to +150°C.
Packaged in a small SOT-363 surface mount case, the CMKDM8005 TR PBFREE is suitable for applications such as load switching, level shifting, battery charging, boost switching, and electro-luminescent backlighting. It also includes ESD protection up to 1800V (Human Body Model).
The maximum drain-source voltage is 20V.
The continuous drain current is 650mA.
The Rds(on) is a maximum of 360mOhm at 350mA drain current and 4.5V gate-source voltage.
The component is supplied in a SOT-363 surface mount package.
The operating and storage junction temperature range is -65°C to +150°C.