| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CGH40180PP is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF power applications. It operates from a 28V supply and delivers up to 220W typical saturated power with 65% typical drain efficiency. The device features a frequency range from DC to 2.5 GHz, making it suitable for broadband amplifiers, cellular infrastructure, and test instrumentation. Key electrical characteristics include a typical small signal gain of 19 dB, minimum power gain of 13 dB at saturation, and a drain-source breakdown voltage of 84V minimum. The transistor is housed in a 4-lead flange package (package type 440199) with flange mount and lead terminations. It has a maximum operating junction temperature of 225°C and a case operating temperature range of -40°C to +85°C. The thermal resistance from junction to case is 0.9°C/W. The device is RoHS3 compliant and has MSL 1 unlimited moisture sensitivity level. It is suitable for class A, AB amplifiers and can handle OFDM, W-CDMA, EDGE, and CDMA waveforms.
The nominal operating drain-source voltage is 28V.
It is available in a 4-lead flange package, type 440199.
The case operating temperature range is -40°C to +85°C.
Yes, it is listed as RoHS3 compliant, though this is unverified.
Typical saturated power output is 220W, with a minimum of 180W.
It supports DC to 2.5 GHz operation.
Typical small signal gain is 19 dB.