CGH40010F The CGH40010F is an unmatched GaN HEMT from Wolfspeed, designed for broadband RF and microwave applications from DC to 6 GHz. It delivers 12.5W typical output power at saturation with 65% drain efficiency.
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CGH40010F

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
The CGH40010F is an unmatched GaN HEMT from Wolfspeed, designed for broadband RF and microwave applications from DC to 6 GHz. It delivers 12.5W typical output power at saturation with 65% drain efficiency.
Total Stock: 1,236 pcs
$ Price Range: $91.93

CGH40010F Available from 1 distributor

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1,236 pcs
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CGH40010F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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CGH40010F Description

Short technical summary and product information.

The CGH40010F is an unmatched gallium nitride high electron mobility transistor (GaN HEMT) designed for general purpose broadband RF and microwave amplification. Operating from a 28 V drain supply, it covers the full DC to 6 GHz frequency range, making it suitable for a wide variety of linear and compressed amplifier circuits.

 

Key electrical specifications include a typical small signal gain of 14.5 dB at 3.7 GHz, 12.5 W typical saturated output power, and 65% drain efficiency under the same test conditions. The device features a maximum drain current of 3.5 A and a quiescent current of 200 mA. The transistor is housed in a 440166 flange package and is capable of operating over a case temperature range of -40°C to +150°C with a maximum junction temperature of 225°C.

 

Designed for applications such as 2-way private radio, broadband amplifiers, cellular infrastructure, and test instrumentation, the CGH40010F supports Class A/AB linear operation suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms. Large signal models are available for ADS and MWO design tools.

CGH40010F Quick Information

Product Type: RF Power GaN HEMT
Series: CGH40010
Canonical Name: CGH40010F 10W DC-6 GHz RF Power GaN HEMT
Subcategory: Transistors - FETs, MOSFETs - RF

CGH40010F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

CGH40010F Estimated Pricing

Qty Low High
1+ $91.93 $91.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

CGH40010F Features

  • Unmatched GaN HEMT for broadband RF amplification.
  • DC to 6 GHz frequency coverage.
  • 12.5W typical saturated output power.
  • 14.5 dB small signal gain at 3.7 GHz.
  • 65% drain efficiency at Psat.

CGH40010F Applications

  • Ideal for 2-way private radio systems.
  • Suited for broadband linear and compressed amplifiers.
  • Used in cellular infrastructure power amplifiers.
  • Suitable for test instrumentation and general purpose RF.

CGH40010F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the CGH40010F?

The nominal drain-source voltage is 28 V.

What package is the CGH40010F available in?

It is available in the 440166 package.

What is the operating temperature range of the CGH40010F?

The case operating temperature range is -40°C to +150°C.

Does the CGH40010F meet RoHS requirements?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.

What is the frequency range of the CGH40010F?

The frequency range is DC to 6 GHz.

What is the typical output power of the CGH40010F?

The typical saturated output power (Psat) is 12.5 W.

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