| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,236 pcs
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1236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CGH40010F is an unmatched gallium nitride high electron mobility transistor (GaN HEMT) designed for general purpose broadband RF and microwave amplification. Operating from a 28 V drain supply, it covers the full DC to 6 GHz frequency range, making it suitable for a wide variety of linear and compressed amplifier circuits.
Key electrical specifications include a typical small signal gain of 14.5 dB at 3.7 GHz, 12.5 W typical saturated output power, and 65% drain efficiency under the same test conditions. The device features a maximum drain current of 3.5 A and a quiescent current of 200 mA. The transistor is housed in a 440166 flange package and is capable of operating over a case temperature range of -40°C to +150°C with a maximum junction temperature of 225°C.
Designed for applications such as 2-way private radio, broadband amplifiers, cellular infrastructure, and test instrumentation, the CGH40010F supports Class A/AB linear operation suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms. Large signal models are available for ADS and MWO design tools.
| Qty | Low | High |
|---|---|---|
| 1+ | $91.93 | $91.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal drain-source voltage is 28 V.
It is available in the 440166 package.
The case operating temperature range is -40°C to +150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.
The frequency range is DC to 6 GHz.
The typical saturated output power (Psat) is 12.5 W.