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CGH40006P RF power GaN HEMT transistor from Wolfspeed, operating up to 6 GHz with 28V drain supply. Provides 13 dB small signal gain at 2 GHz and 8W typical output power at 32 dBm input drive.
Mfr Part #:

CGH40006P

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
RF power GaN HEMT transistor from Wolfspeed, operating up to 6 GHz with 28V drain supply. Provides 13 dB small signal gain at 2 GHz and 8W typical output power at 32 dBm input drive.
✓ Total Stock: 960 pcs
$ Price Range: $20.47

CGH40006P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
960 pcs
On Request
960 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

CGH40006P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Current
Current Rating (Amps)
Frequency
Gain
Input Capacitance
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Power
Storage Temperature
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Tape & Reel
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CGH40006P Description

Short technical summary and product information.

The CGH40006P is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) from Wolfspeed, designed for RF and microwave applications up to 6 GHz.

 

Operating from a 28-volt rail, this device delivers 13 dB small signal gain at 2.0 GHz and 11 dB at 6.0 GHz. Typical output power is 8 W at 32 dBm input drive, with minimum 7 W and typical 9 W specified. Drain efficiency ranges from 53% minimum to 65% typical.

 

The CGH40006P is housed in a solder-down 440109 pill package rated for surface mount assembly. It features a maximum drain current of 0.75 A for reliable operation and can withstand an output mismatch VSWR of 10:1 without damage. The junction temperature limit is 225°C with a case operating range of -40°C to +150°C.

CGH40006P Quick Information

Product Type: RF Power GaN HEMT
Canonical Name: CGH40006P 6W, 28V RF Power GaN HEMT
Subcategory: RF MOSFET

CGH40006P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

CGH40006P Estimated Pricing

Qty Low High
1+ $20.47 $20.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

CGH40006P Features

  • 6W output power at 32 dBm input drive.
  • 13 dB small signal gain at 2.0 GHz.
  • 28V drain operation voltage.
  • 440109 surface-mount pill package.
  • Drain efficiency up to 65% typical.

CGH40006P Applications

  • Suitable for broadband RF amplifiers.
  • Used in 2-way private radio systems.
  • Ideal for cellular infrastructure applications.
  • Applicable in test instrumentation equipment.

CGH40006P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the CGH40006P?

DC to 6 GHz maximum.

What is the typical gain of the CGH40006P?

13 dB typical at 2.0 GHz and 11 dB typical at 6.0 GHz with VDD=28V, IDQ=100 mA.

What is the output power of the CGH40006P?

7 W minimum, 9 W typical at PIN=32 dBm, VDD=28V, IDQ=100 mA.

What is the operating voltage of the CGH40006P?

28 V nominal drain-source voltage.

What package is the CGH40006P available in?

440109 solder-down pill package for surface mount.

What is the operating temperature range for the CGH40006P?

-40°C to +150°C case temperature.

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