| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,217 pcs
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3217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CG2H40010F is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave power applications. Operating from a 28V supply, it delivers 17W typical saturated output power with 70% drain efficiency, making it suitable for linear and compressed amplifier circuits.
Key electrical specifications include a small signal gain of 16.5 dB at 8 GHz, a drain-source breakdown voltage of 84V minimum, and a maximum drain current of 1.5A. The device features low capacitances (input 4.19 pF, output 1.84 pF, feedback 0.186 pF) and a maximum junction temperature of 225°C.
The CG2H40010F is housed in a 440166 package with chassis mount configuration, offering screw-down mounting for reliable thermal and electrical connection. It operates over a case temperature range of -40°C to +150°C and is suitable for broadband amplifiers, cellular infrastructure, and test instrumentation.
The CG2H40010F operates from a 28V rail.
The CG2H40010F uses a 440166 package with chassis mount configuration.
The operating case temperature range is -40°C to +150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.