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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Nominal @ TC < 25 °C) | |
| Average Rectified Current (Nominal @ Tc=135 °C) | |
| Average Rectified Current (Nominal @ Tc=157 °C) | |
| Capacitance Stored Energy (Ec) (Per Leg) | |
| Current | |
| Diode Configuration | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TJ = 175 °C) | |
| Halogen Free | |
| Industrial Grade | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Nominal @ tp=10 ms, Half Sine Wave, Tc=110 °C) | |
| Non Repetitive Peak Forward Surge Current (Nominal @ tp=10 ms, Half Sine Wave, Tc=25 °C) | |
| Operating Temperature | |
| Power Dissipation (Nominal @ TC=110 °C) | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Repetitive Peak Forward Surge Current (Nominal @ tp=10 ms, Half Sine Wave, Tc=110 °C) | |
| Repetitive Peak Forward Surge Current (Nominal @ tp=10 ms, Half Sine Wave, Tc=25 °C) | |
| Reverse Current (Typical/Maximum @ VR = 1200 V, TJ = 25 °C) | |
| Reverse Current (Typical/Maximum @ Vr=1200 V, Tj=175 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Total Capacitance (Typical @ VR = 0 V, Tj = 25 °C, f = 1 MHz) | |
| Total Capacitance (Typical @ Vr=400 V, Tj=25 °C, f=1 MHz) | |
| Total Capacitance (Typical @ Vr=800 V, Tj=25 °C, f=1 MHz) | |
| Total Capacitive Charge (Qc) (Per Leg) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The C4D20120D is a 4th generation silicon carbide (SiC) Schottky diode array from Wolfspeed, configured as a common cathode pair. It is rated for a maximum reverse voltage of 1200V and delivers an average rectified current of 34A per leg (68A per device) at 25°C, derating to 10A per leg (20A per device) at 157°C. The forward voltage is typically 1.5V at 10A and 25°C, with a maximum of 1.8V.
This diode exhibits zero reverse recovery current, enabling high-frequency switching with minimal losses. The total capacitive charge is 52nC typical, and the junction capacitance is 38pF at 800V. The device can handle non-repetitive peak forward surge currents up to 71A per leg at 25°C. Operating temperature range is -55°C to 175°C.
The C4D20120D is housed in a through-hole TO-247-3 package, suitable for high-power applications. Typical uses include boost diodes in PFC or DC/DC stages, freewheeling diodes in inverter stages, switch mode power supplies, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $18.18 | $18.18 |
| 30+ | $11.19 | $11.19 |
| 60+ | $10.36 | $10.36 |
| 120+ | $9.66 | $9.66 |
| 510+ | $8.40 | $8.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 1200V.
At Tc=25°C, the average rectified current is 34A per leg and 68A per device. At Tc=157°C, it is 10A per leg and 20A per device.
At If=10A and Tj=25°C, the forward voltage is typically 1.5V and maximum 1.8V per leg.
No, the reverse recovery time is 0 ns, meaning zero reverse recovery current.
The C4D20120D is available in a TO-247-3 through-hole package.
The operating temperature range is -55°C to 175°C.
The C4D20120D uses Silicon Carbide (SiC) Schottky technology.