| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Wolfspeed C4D08120A is a 1200V Silicon Carbide (SiC) Schottky barrier diode designed for high-efficiency power conversion. It delivers 24.5A continuous forward current at 25°C case temperature and 8A at elevated temperatures up to 157°C. The forward voltage is typically 1.5V at 8A and 25°C junction temperature, with a positive temperature coefficient for safe paralleling.
With zero reverse recovery current and forward recovery voltage, this diode eliminates switching losses common in silicon diodes. It can handle repetitive peak surge currents up to 37.5A at 25°C and non-repetitive surges up to 64A. The total capacitive charge is only 37 nC at 800V, enabling high-frequency operation.
Housed in a TO-220-2 through-hole package, the C4D08120A is rated for an operating junction temperature range from -55°C to 175°C. It is ideal for boost stages in PFC and DC-DC converters, solar inverters, and industrial power supplies. The device is RoHS3 compliant and REACH unaffected.
The repetitive peak reverse voltage is 1200V.
The continuous forward current is 24.5A at TC=25°C and derates to 8A at TC=135°C and 157°C.
At IF=8A and Tj=25°C, typical VF is 1.5V and maximum is 1.8V. At Tj=175°C, typical VF is 2.2V and maximum is 3V.
No, the reverse recovery time is 0 ns because it is a SiC Schottky diode with zero reverse recovery current.
It comes in a TO-220-2 through-hole package.
The operating junction temperature range is -55°C to 175°C.
At tp=10ms and TC=25°C, the surge current is 64A; at TC=110°C it is 49.5A. For a 10µs pulse, it is 600A at 25°C and 480A at 110°C.