C3M0350120D C3M0350120D is a 1200V N-Channel Silicon Carbide MOSFET from Wolfspeed. It features 7.6A continuous drain current, low 350mOhm typical on-resistance, and is housed in a TO-247-3 package.
Mfr Part #:

C3M0350120D

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
C3M0350120D is a 1200V N-Channel Silicon Carbide MOSFET from Wolfspeed. It features 7.6A continuous drain current, low 350mOhm typical on-resistance, and is housed in a TO-247-3 package.
Total Stock: 177 pcs
$ Price Range: $2.72 - $6.78

C3M0350120D Available from 1 distributor

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C3M0350120D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

C3M0350120D Description

Short technical summary and product information.

The C3M0350120D is a 1200V N-Channel enhancement-mode Silicon Carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology. It offers high blocking voltage with low on-resistance and high-speed switching capabilities.

 

Key electrical parameters include a maximum drain-source voltage of 1200V, continuous drain current of 7.6A at 25°C (5.5A at 100°C), and typical on-resistance of 350mOhm at 25°C. The gate threshold voltage ranges from 1.8V to 3.6V. The device features low input capacitance (345pF) and reverse transfer capacitance (3.4pF) for efficient switching.

 

The MOSFET is designed for applications such as renewable energy systems, high-voltage DC/DC converters, switch-mode power supplies, and uninterruptible power supplies. It is qualified for industrial use and offers high system efficiency and reduced cooling requirements.

 

The device is housed in a TO-247-3 through-hole package, with mounting torque of 1 Nm. It is RoHS compliant and halogen free. Operating junction temperature range is -55°C to 150°C. Recommended turn-on gate voltage is 15V.

C3M0350120D Quick Information

Product Type: Discrete Silicon Carbide MOSFET
Series: C3M
Canonical Name: C3M0350120D Silicon Carbide Power MOSFET
Subcategory: N-Channel SiC MOSFET

C3M0350120D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

C3M0350120D Estimated Pricing

Qty Low High
1+ $6.78 $6.78
30+ $3.84 $3.84
60+ $3.49 $3.49
120+ $3.20 $3.20
510+ $2.72 $2.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

C3M0350120D Features

  • 1200V drain-source breakdown voltage.
  • Low 350mOhm typical on-resistance.
  • 7.6A continuous drain current capability.
  • Low input capacitance for fast switching.
  • RoHS compliant and halogen free.

C3M0350120D Applications

  • Used in renewable energy systems.
  • Ideal for high-voltage DC/DC converters.
  • Suitable for switch-mode power supplies.
  • Used in uninterruptible power supplies.
  • Applicable for industrial motor drives.

C3M0350120D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the C3M0350120D?

1200V minimum.

What package does the C3M0350120D come in?

TO-247-3.

What is the operating junction temperature range?

-55°C to 150°C.

Is the C3M0350120D RoHS compliant?

Yes, it is RoHS3 compliant.

What is the continuous drain current at 25°C?

7.6A maximum.

What is the typical on-resistance?

350mOhm at 25°C.

What is the gate threshold voltage range?

1.8V to 3.6V at 25°C.

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