| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,620 pcs
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4620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The C3M0280090D is a N-Channel enhancement mode Silicon Carbide (SiC) power MOSFET from Wolfspeed, utilizing C3M technology. It offers high blocking voltage and low on-resistance for high-efficiency power conversion.
Key electrical specifications include a minimum drain-source breakdown voltage of 900V, continuous drain current of 11.5A at 25°C, and maximum on-resistance of 360 mOhm at 15V gate drive. The device features low gate charge (9.5 nC max) and low capacitances, enabling high-speed switching with reduced losses.
The MOSFET is housed in a standard TO-247-3 through-hole package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 150°C and is compliant with RoHS and halogen-free requirements.
Typical applications include renewable energy inverters, high-voltage DC/DC converters, telecom power supplies, induction heating, and lighting systems. The intrinsic fast diode with low reverse recovery charge further enhances performance in bridge topologies.
The minimum drain-source breakdown voltage is 900V.
It is available in a TO-247-3 package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant according to the datasheet.
The maximum on-resistance is 360 mOhm at 7.5A drain current and 15V gate drive.
The continuous drain current is 11.5A at case temperature 25°C.
The maximum gate charge is 9.5 nC at 15V gate voltage.