| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376,000 pcs
|
376000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The C3M0120065D is a third-generation silicon carbide (SiC) power MOSFET from Wolfspeed, designed for high-voltage, high-efficiency power conversion. It is an N-channel enhancement-mode device with a drain-source voltage rating of 650V and a continuous drain current of 22A at 25°C case temperature. The typical on-resistance is 120mOhm at 15V gate drive, with a maximum of 157mOhm. The device features low gate charge (28nC) and low input capacitance (640pF), enabling high-speed switching with reduced losses.
The MOSFET is suitable for applications such as solar inverters, DC/DC converters, switch-mode power supplies, EV battery chargers, and UPS systems. Its fast intrinsic diode with low reverse recovery charge (Qrr) allows efficient operation in hard-switching topologies like totem-pole PFC. The recommended gate drive voltage is 15V, with a maximum transient gate-source voltage range of -8V to +19V.
The C3M0120065D is packaged in a standard TO-247-3 through-hole package, which facilitates easy mounting and thermal management. The operating junction temperature range is -40°C to 175°C, and the device is RoHS and halogen-free compliant. With its high blocking voltage and low on-resistance, this SiC MOSFET enables increased system efficiency, reduced cooling requirements, and higher power density in power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.26 | $9.26 |
| 10+ | $7.20 | $7.20 |
| 30+ | $6.59 | $6.59 |
| 120+ | $6.06 | $6.06 |
| 270+ | $5.82 | $5.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-3.
-40°C to 175°C.
Yes, RoHS3 compliant and halogen-free.
120mOhm at 15V Vgs.
22A at 25°C case temperature.
15V with ±5% regulation.