C3M0065100J C3M0065100J is a 1000V, 35A N-Channel Silicon Carbide Power MOSFET from Wolfspeed. It is designed for high-efficiency power conversion applications such as EV chargers and DC/DC converters.
Mfr Part #:

C3M0065100J

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
C3M0065100J is a 1000V, 35A N-Channel Silicon Carbide Power MOSFET from Wolfspeed. It is designed for high-efficiency power conversion applications such as EV chargers and DC/DC converters.
Total Stock: 8,500 pcs
$ Price Range: $24.86

C3M0065100J Available from 1 distributor

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C3M0065100J Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

C3M0065100J Description

Short technical summary and product information.

The C3M0065100J is a 1000V, 35A N-Channel Silicon Carbide Power MOSFET from Wolfspeed, employing C3M SiC MOSFET technology. It features a maximum drain-source on-resistance of 78mOhm at 20A and 15V gate drive, with a typical value of 65mOhm at 25°C. The device offers a low gate charge of 35nC and 660pF input capacitance, enabling high-frequency switching.

 

Designed for high-voltage power conversion, the C3M0065100J is suitable for renewable energy inverters, EV battery chargers, high-voltage DC/DC converters, and switch-mode power supplies. Its fast intrinsic diode with low reverse recovery charge and low output capacitance (60pF) contribute to reduced switching losses.

 

The MOSFET is housed in a TO-263-8 (D2PAK-7) surface-mount package, offering 7mm creepage distance between drain and source. It supports a maximum junction temperature of 150°C and has a power dissipation capability of 113.5W at 25°C case temperature. The device is RoHS compliant and halogen free.

C3M0065100J Quick Information

Product Type: Silicon Carbide Power MOSFET
Series: C3M
Canonical Name: C3M0065100J Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel SiC MOSFET

C3M0065100J Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: Non-Compliant
Lead Free: Yes

C3M0065100J Estimated Pricing

Qty Low High
1+ $24.86 $24.86

Estimated market price range - modelled values for guidance only, not live distributor offers.

C3M0065100J Features

  • 1000V drain-source voltage rating.
  • 35A continuous drain current at 25°C.
  • Low on-resistance of 78mOhm typical.
  • Fast switching with low gate charge.
  • RoHS compliant and halogen free.

C3M0065100J Applications

  • Used in renewable energy inverters.
  • Ideal for EV battery chargers.
  • Suitable for high voltage DC/DC converters.
  • Applied in switch mode power supplies.

C3M0065100J FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the C3M0065100J?

The operating junction temperature range is -55°C to 150°C.

Is the C3M0065100J RoHS compliant?

Yes, it is RoHS3 compliant and halogen free.

What package is the C3M0065100J available in?

It is available in a TO-263-8 (D2PAK-7) surface-mount package.

What is the maximum drain-source voltage of the C3M0065100J?

The maximum drain-source voltage is 1000V.

What is the continuous drain current rating?

The continuous drain current is 35A at 25°C case temperature.

What is the typical on-resistance of the C3M0065100J?

The typical on-resistance is 65mOhm at 20A and 15V gate drive at 25°C.

What is the gate charge of the C3M0065100J?

The maximum gate charge is 35nC at 15V gate drive.

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