Mfr Part #:

C3M0060065J

Mfr Name: Wolfspeed

C3M0060065J is a 650V, 36A N-Channel Silicon Carbide MOSFET from Wolfspeed. It features low on-resistance (79mOhm max) and is housed in a surface-mount TO-263-7 package.

✓ Total Stock: 6,413 pcs

$ Price Range: $4.14 - $9.64

C3M0060065J Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,413 pcs On Request	6413 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

C3M0060065J Description

Short technical summary and product information.

The C3M0060065J is a third-generation (Gen 3) Silicon Carbide (SiC) power MOSFET from Wolfspeed. It is an N-channel enhancement-mode device rated for a drain-source voltage of 650V and a continuous drain current of 36A at 25°C. The typical on-resistance is 60mOhm, with a maximum of 79mOhm at 13.2A and 15V gate drive. The device features a fast intrinsic diode with low reverse recovery charge, enabling high-frequency switching. It is designed for applications such as EV charging, server power supplies, solar inverters, and UPS systems. The MOSFET is housed in a TO-263-7 surface-mount package with a Kelvin source pin for improved gate drive performance. It operates over a junction temperature range of -40°C to 175°C and is RoHS and halogen-free compliant. The device is qualified for industrial applications.

C3M0060065J Quick Information

Product Type: Discrete SiC MOSFET

Series: Gen 3

Canonical Name: C3M0060065J - 650V N-Channel SiC MOSFET

Subcategory: N-Channel SiC MOSFET

C3M0060065J Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 3

REACH Status: Non-Compliant

Lead Free: Yes

C3M0060065J Estimated Pricing

Qty	Low	High
1+	$9.64	$9.64
10+	$6.60	$6.60
50+	$5.30	$5.30
100+	$4.88	$4.88
500+	$4.14	$4.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

C3M0060065J Features

650V drain-source breakdown voltage.
36A continuous drain current at 25°C.
Low on-resistance of 60mOhm typical.
Third-generation SiC MOSFET technology.
Surface-mount TO-263-7 package with Kelvin source.

C3M0060065J Applications

Ideal for EV charging infrastructure.
Used in server power supply units.
Suitable for solar PV inverters.
Enables high-efficiency UPS systems.
Designed for DC/DC converters.

C3M0060065J FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the C3M0060065J?

650V.

What package is the C3M0060065J available in?

TO-263-7 surface-mount package.

What is the operating junction temperature range?

-40°C to 175°C.

Is the C3M0060065J RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum continuous drain current?

36A at Tc=25°C, 26A at Tc=100°C.

What is the typical on-resistance?

60mOhm typical at 25°C, 80mOhm typical at 175°C.

What is the gate threshold voltage?

Typical 2.3V at 25°C, maximum 3.6V at 5mA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Wolfspeed
AEC Qualified	No
Automotive Grade	No
Container Type	Tube
Current	36A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 15 V
Halogen Free	Yes
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	1020 pF @ 600 V
Lead Style	Gull Wing
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 175°C (TJ)
Power Dissipation (Max)	136W (Tc)
Rds On (Max) @ Id, Vgs	79mOhm
SVHC Present	Present
Storage Temperature	-40°C ~ 175°C
Supplier Device Package	TO-263-7
Tape & Reel	No
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+15V, -4V
Vgs(th) (Max) @ Id	3.6V