C3M0016120K The C3M0016120K is a 1.2kV, 115A N-Channel Silicon Carbide power MOSFET from Wolfspeed's C3M family. It features a low on-resistance of 22.3mOhm and is housed in a TO-247-4 package.
Mfr Part #:

C3M0016120K

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
The C3M0016120K is a 1.2kV, 115A N-Channel Silicon Carbide power MOSFET from Wolfspeed's C3M family. It features a low on-resistance of 22.3mOhm and is housed in a TO-247-4 package.
Total Stock: 3,250 pcs
$ Price Range: $18.30 - $27.82

C3M0016120K Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,250 pcs
3250 pcs On Request 1 On Request On Request On Request On Request On Request

C3M0016120K Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

C3M0016120K Description

Short technical summary and product information.

The C3M0016120K is a third-generation Silicon Carbide (SiC) power MOSFET from Wolfspeed, designed for high-voltage, high-efficiency power conversion. This N-Channel enhancement mode device features a drain-source breakdown voltage of 1200V and a continuous drain current rating of 115A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 22.3mOhm at 75A and 15V gate drive, a typical gate charge of 211nC, and low input capacitance of 6085pF at 1000V. The device is capable of 556W power dissipation and operates over a junction temperature range of -40°C to 175°C.

 

The C3M0016120K is offered in a TO-247-4 package with a separate driver source pin for optimized switching performance. It is through-hole mountable with a recommended mounting torque of 1 Nm. The device is RoHS compliant and halogen free.

C3M0016120K Quick Information

Product Type: Silicon Carbide Power MOSFET
Series: C3M
Canonical Name: C3M0016120K Silicon Carbide N-Channel Power MOSFET
Subcategory: Single MOSFETs

C3M0016120K Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant

C3M0016120K Estimated Pricing

Qty Low High
1+ $27.82 $27.82
30+ $18.30 $18.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

C3M0016120K Features

  • 1200V drain-source breakdown voltage.
  • 115A continuous drain current at 25°C.
  • 22.3mOhm maximum on-resistance at 75A.
  • TO-247-4 package with separate driver source.
  • RoHS compliant and halogen free.

C3M0016120K Applications

  • Solar inverter power conversion stages.
  • Electric vehicle motor drive systems.
  • High voltage DC/DC converter designs.
  • Switched mode power supply applications.
  • High power load switch circuits.

C3M0016120K FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the C3M0016120K?

The drain-source breakdown voltage is 1200V.

What is the maximum continuous drain current?

The continuous drain current is 115A at 25°C case temperature.

What package is the C3M0016120K available in?

It is available in a TO-247-4 package (supplier device package TO-247-4L) with through-hole mounting.

What is the operating temperature range?

The operating junction temperature range is -40°C to 175°C.

Is the C3M0016120K RoHS compliant?

Yes, the datasheet states it is RoHS compliant and halogen free.

What is the typical gate charge of this MOSFET?

The maximum gate charge is 211nC at 15V gate-source voltage.

What is the maximum power dissipation?

The maximum power dissipation is 556W at case temperature.

Home
Account

Categories