C3M0015065K C3M0015065K is a Silicon Carbide (SiC) N-Channel MOSFET with 650V drain-source voltage and 120A continuous drain current. It is housed in a TO-247-4 package with through-hole mounting.
Mfr Part #:

C3M0015065K

Available from 3 distributors
Mfr Name: Wolfspeed
Wolfspeed
C3M0015065K is a Silicon Carbide (SiC) N-Channel MOSFET with 650V drain-source voltage and 120A continuous drain current. It is housed in a TO-247-4 package with through-hole mounting.
Total Stock: 12,908 pcs
$ Price Range: $9.21 - $18.25

C3M0015065K Available from 3 distributors

Authorised
Non-Authorised

C3M0015065K Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Number of Pins
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

C3M0015065K Description

Short technical summary and product information.

The C3M0015065K is a high-performance N-Channel Silicon Carbide (SiC) power MOSFET from Wolfspeed, part of the C3M series. It features a drain-source voltage rating of 650V and a continuous drain current of 120A at 25°C. The device offers low typical on-resistance of 15 mOhm at 25°C and 20 mOhm at 175°C, enabling efficient high-power switching. With a maximum gate charge of 188 nC and input capacitance of 5011 pF, it is optimized for high-speed switching applications.

 

The MOSFET is designed for use in EV chargers, solar inverters, UPS systems, switch-mode power supplies, and DC/DC converters. The TO-247-4 package includes a separate driver source pin to minimize gate ringing, and provides 8 mm of creepage distance between drain and source for improved reliability. The device operates over a junction temperature range of -40°C to 175°C and is RoHS compliant and halogen free.

C3M0015065K Quick Information

Product Type: SiC Power MOSFET
Series: C3M
Canonical Name: C3M0015065K Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel SiC MOSFET

C3M0015065K Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

C3M0015065K Estimated Pricing

Qty Low High
1+ $18.25 $18.25
30+ $11.31 $11.31
60+ $10.48 $10.48
120+ $9.79 $9.79
510+ $9.21 $9.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

C3M0015065K Features

  • 650V drain-source breakdown voltage.
  • 120A continuous drain current at 25°C.
  • Low typical on-resistance of 15mOhm.
  • High-speed switching with low gate charge.
  • RoHS compliant and halogen free.

C3M0015065K Applications

  • EV chargers and solar inverters.
  • Uninterruptible power supplies (UPS).
  • Switch-mode power supplies (SMPS).
  • DC/DC converters.

C3M0015065K FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of C3M0015065K?

The drain-source voltage rating is 650V (minimum breakdown voltage).

What is the maximum continuous drain current?

The maximum continuous drain current is 120A at Tc=25°C and 96A at Tc=100°C.

What is the package type of this MOSFET?

The package is TO-247-4 (through-hole, 4 pins).

What is the operating temperature range?

The junction and storage temperature range is -40°C to 175°C.

Is the C3M0015065K RoHS compliant?

Yes, it is RoHS compliant and halogen free as stated in the datasheet.

What is the typical on-resistance at 25°C?

Typical on-resistance is 15 mOhm at Vgs=15V, Id=55.8A, Tj=25°C.

What is the recommended gate drive voltage?

The recommended turn-on gate voltage is 15V with ±5% regulation tolerance.

Home
Account

Categories