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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
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3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance (Typical @ VR=0 V, f=1 MHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Forward Voltage (Typical/Maximum @ IF = 10 A, TJ = 175 °C) | |
| Forward Voltage (Typical/Maximum @ IF=10 A, Tj=25 °C) | |
| Mounting Type | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=110 °C, tp=10 ms, Half Sine Wave) | |
| Non Repetitive Peak Forward Surge Current (Nominal @ TC=25 °C, tp=10 ms, Half Sine Wave) | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation (Nominal @ TC=110 °C) | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Reverse Current (Typical/Maximum @ Vr = 600 V, Tj = 175 °C) | |
| Reverse Current (Typical/Maximum @ Vr = 600 V, Tj = 25 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| capacitance (Typical @ VR = 200 V, f = 1 MHz) | |
| capacitance (Typical @ VR = 400 V, f = 1 MHz) |
The Wolfspeed C3D10060A is a third-generation 600V, 30A Silicon Carbide (SiC) Schottky barrier diode designed for high-efficiency power conversion. It offers a low forward voltage drop of typically 1.5V at 10A (25°C) with a positive temperature coefficient, enabling easy paralleling without thermal runaway. The diode exhibits zero reverse recovery current and temperature-independent switching behavior, minimizing switching losses and enabling higher frequency operation.
Key electrical specifications include a maximum reverse voltage of 600V, an average rectified current of 30A at 25°C case temperature, and a non-repetitive peak forward surge current of 90A (10ms half sine wave at 25°C). The device can dissipate up to 136.5W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.
Typical applications include industrial switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC) boost stages, solar inverters, and DC-DC converter stages. The diode is housed in a through-hole TO-220-2 package, suitable for PCB mounting with standard lead spacing.
The C3D10060A is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). It is a direct replacement for Si-based diodes in high-efficiency designs, offering improved thermal performance and reduced system cost.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.43 | $1.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage is 600 V.
30 A at case temperature 25°C.
Typically 1.5 V, maximum 1.8 V at 10 A, junction temperature 25°C.
No, it is a SiC Schottky diode with zero reverse recovery current, resulting in 0 ns reverse recovery time.
It is available in a TO-220-2 through-hole package.
-55°C to 175°C.
90 A at 25°C, 10 ms half sine wave.