C2M0045170D The C2M0045170D is a 1700V, 75A N-Channel SiC MOSFET from Wolfspeed. It features low on-resistance (70mOhm max) and high-speed switching in a TO-247-3 package.
Mfr Part #:

C2M0045170D

Available from 1 distributors
Mfr Name: Wolfspeed
Wolfspeed
The C2M0045170D is a 1700V, 75A N-Channel SiC MOSFET from Wolfspeed. It features low on-resistance (70mOhm max) and high-speed switching in a TO-247-3 package.
Total Stock: 1,570 pcs

C2M0045170D Available from 1 distributor

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C2M0045170D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

C2M0045170D Description

Short technical summary and product information.

The C2M0045170D is a second-generation Silicon Carbide (SiC) power MOSFET from Wolfspeed, designed for high-voltage, high-efficiency power conversion. It offers a drain-source breakdown voltage of 1700V and a continuous drain current of 75A at 25°C (48A at 100°C). The device features a typical on-resistance of 40mOhm (70mOhm max) at VGS=20V, enabling low conduction losses. With a maximum power dissipation of 338W at 25°C case temperature, it is suitable for demanding applications. The MOSFET is housed in a standard TO-247-3 through-hole package, with a mounting torque of 1 N·m. It is halogen-free and RoHS compliant. Typical applications include solar inverters, switch-mode power supplies, high-voltage DC/DC converters, motor drives, and pulsed power systems. The device's high-speed switching and low capacitances (Ciss typical 3455pF, Coss 171pF, Crss 6.7pF) contribute to reduced switching losses and increased system efficiency.

C2M0045170D Quick Information

Product Type: Silicon Carbide MOSFET
Series: C2M
Canonical Name: C2M0045170D - Silicon Carbide N-Channel MOSFET, 1700V, 75A, TO-247-3
Subcategory: Single MOSFET

C2M0045170D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

C2M0045170D Features

  • 1700V drain-source breakdown voltage.
  • 75A continuous drain current at 25°C.
  • Low on-resistance of 40mOhm typical.
  • High-speed switching with low capacitances.
  • Halogen-free and RoHS compliant.

C2M0045170D Applications

  • Ideal for solar inverter designs.
  • Used in high-voltage DC/DC converters.
  • Suitable for switch-mode power supplies.
  • Applicable in motor drive systems.
  • Designed for pulsed power applications.

C2M0045170D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the C2M0045170D?

The minimum drain-source breakdown voltage is 1700V.

What package does the C2M0045170D come in?

It is available in a TO-247-3 through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -40°C to 150°C.

Is the C2M0045170D RoHS compliant?

Yes, it is RoHS compliant and halogen-free.

What is the gate threshold voltage?

The gate threshold voltage ranges from 2.0V to 4.0V.

What is the typical on-resistance?

Typical on-resistance is 40mOhm at 25°C with VGS=20V.

What is the maximum continuous drain current?

Maximum continuous drain current is 75A at 25°C case temperature.

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