| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,570 pcs
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1570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The C2M0045170D is a second-generation Silicon Carbide (SiC) power MOSFET from Wolfspeed, designed for high-voltage, high-efficiency power conversion. It offers a drain-source breakdown voltage of 1700V and a continuous drain current of 75A at 25°C (48A at 100°C). The device features a typical on-resistance of 40mOhm (70mOhm max) at VGS=20V, enabling low conduction losses. With a maximum power dissipation of 338W at 25°C case temperature, it is suitable for demanding applications. The MOSFET is housed in a standard TO-247-3 through-hole package, with a mounting torque of 1 N·m. It is halogen-free and RoHS compliant. Typical applications include solar inverters, switch-mode power supplies, high-voltage DC/DC converters, motor drives, and pulsed power systems. The device's high-speed switching and low capacitances (Ciss typical 3455pF, Coss 171pF, Crss 6.7pF) contribute to reduced switching losses and increased system efficiency.
The minimum drain-source breakdown voltage is 1700V.
It is available in a TO-247-3 through-hole package.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS compliant and halogen-free.
The gate threshold voltage ranges from 2.0V to 4.0V.
Typical on-resistance is 40mOhm at 25°C with VGS=20V.
Maximum continuous drain current is 75A at 25°C case temperature.