PUMD10,115
NXP Semiconductors
The NXP Semiconductors PUMD10,115 is a pre-biased bipolar transistor array featuring 1 NPN and 1 PNP transistor. It operates at up to 50V and 100mA.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,535 pcs
|
2535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,470 pcs
|
2470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type |
The NXP Semiconductors BZX384-B13,115 is a low-power voltage regulator diode designed for general regulation functions. It comes in a compact SOD323 (SC-76) surface-mounted device plastic package.
This diode has a nominal Zener voltage of 13V and a total power dissipation of up to 300mW at 25°C ambient temperature. The forward voltage is a maximum of 0.9V at 10mA. The series offers various breakdown voltages and tolerance ranges.
It is suitable for applications requiring stable voltage references. The surface-mount SOD323 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal Zener voltage is 13V.
The total power dissipation is a maximum of 300mW at 25°C ambient temperature.
The maximum forward voltage is 0.9V at 10mA.
It is in a SOD323 (SC-76) surface-mounted device plastic package.
They are used for general regulation functions.
