IRFR5305TRPBF
Infineon
The Infineon IRFR5305TRPBF is a single MOSFET transistor. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,671 pcs
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2671 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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2,300 pcs
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2300 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The BYC8-600P from NXP Semiconductors is a hyperfast power diode rectifier designed for efficient power conversion applications. This component features a maximum reverse voltage of 600V and a maximum forward current of 8A, making it suitable for various power supply and switching circuits.
With a typical forward voltage of 3.4V and a fast recovery time of 18ns, the BYC8-600P minimizes power loss and improves circuit efficiency. It has a maximum surge current rating of 100A and a low reverse current of 20µA.
The rectifier is housed in a TO-220-2 package and utilizes through-hole mounting. It operates within a wide temperature range of -65°C to +175°C, ensuring reliability in demanding environments. The standard packaging is tube, with a factory pack quantity of 1000 units.
This rectifier is classified under Diodes - Rectifiers - Single and is a key component for designers seeking high-speed switching performance in their power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 600 V.
The maximum forward current is 8 A.
The typical forward voltage is 3.4 V.
The recovery time is 18 ns.
The operating temperature range is -65 °C to +175 °C.
The BYC8-600P is supplied in a TO-220-2 package.
The BYC8-600P is mounted using the through-hole method.
