BUZ384 The Siemens BUZ384 is a power transistor with a breakdown voltage of 500V and a maximum power dissipation of 125W. It offers a minimum drain-source resistance of 600mΩ.
Mfr Part #:

BUZ384

Available from 1 distributors
Mfr Name: Siemens
Siemens
The Siemens BUZ384 is a power transistor with a breakdown voltage of 500V and a maximum power dissipation of 125W. It offers a minimum drain-source resistance of 600mΩ.
Total Stock: 16 pcs
$ Price Range: $1.07

BUZ384 Available from 1 distributor

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Non-Authorised
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16 pcs
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BUZ384 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Operating Temperature
Power Dissipation

BUZ384 Description

Short technical summary and product information.

The Siemens BUZ384 is a power transistor designed for various electronic applications. It features a high breakdown voltage of 500V, making it suitable for high-voltage circuits. The transistor has a maximum power dissipation rating of 125W and a minimum drain-source resistance of 600mΩ.

 

With a maximum operating temperature of 150°C, the BUZ384 is built to withstand demanding thermal conditions. It has 3 terminals and is designed for robust performance in power applications. This component is manufactured by Siemens Semiconductor Group.

 

This power transistor is part of the broader category of discrete semiconductor products. Its specifications suggest suitability for power switching and amplification tasks where reliability and high voltage handling are critical.

BUZ384 Quick Information

Product Type: Power Transistor
Canonical Name: BUZ384 Power Transistor
Subcategory: Power Transistor

BUZ384 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ384 Estimated Pricing

Qty Low High
1+ $1.07 $1.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ384 Features

  • 500V minimum breakdown voltage.
  • 125W maximum power dissipation.
  • 600mΩ minimum drain-source resistance.
  • 150°C maximum operating temperature.
  • 3-terminal power transistor.

BUZ384 Applications

  • Suitable for high-voltage power circuits.
  • Used in power switching applications.
  • Applicable for amplification tasks.
  • Designed for demanding thermal conditions.

BUZ384 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BUZ384?

The minimum breakdown voltage for the BUZ384 is 500V.

What is the maximum power dissipation for the BUZ384?

The maximum power dissipation for the BUZ384 is 125W.

What is the maximum operating temperature of the BUZ384?

The maximum operating temperature for the BUZ384 is 150°C.

How many terminals does the BUZ384 have?

The BUZ384 has 3 terminals.

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BUZ24
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The BUZ24 is a SIPMOS Power Transistor from Siemens Semiconductor Group. It offers a breakdown voltage of 100V and a drain-source resistance of 60mΩ.
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