| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The Siemens BUZ384 is a power transistor designed for various electronic applications. It features a high breakdown voltage of 500V, making it suitable for high-voltage circuits. The transistor has a maximum power dissipation rating of 125W and a minimum drain-source resistance of 600mΩ.
With a maximum operating temperature of 150°C, the BUZ384 is built to withstand demanding thermal conditions. It has 3 terminals and is designed for robust performance in power applications. This component is manufactured by Siemens Semiconductor Group.
This power transistor is part of the broader category of discrete semiconductor products. Its specifications suggest suitability for power switching and amplification tasks where reliability and high voltage handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the BUZ384 is 500V.
The maximum power dissipation for the BUZ384 is 125W.
The maximum operating temperature for the BUZ384 is 150°C.
The BUZ384 has 3 terminals.