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BUZ326 The Inchange Semiconductor BUZ326 is an N-Channel MOSFET Transistor. It offers a breakdown voltage of 400V and a maximum power dissipation of 125W.
Mfr Part #:

BUZ326

Available from 1 distributors
Mfr Name: Siemens
Siemens
The Inchange Semiconductor BUZ326 is an N-Channel MOSFET Transistor. It offers a breakdown voltage of 400V and a maximum power dissipation of 125W.
✓ Total Stock: 40 pcs
$ Price Range: $0.77

BUZ326 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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40 pcs
On Request
40 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BUZ326 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation
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BUZ326 Description

Short technical summary and product information.

The BUZ326 is an N-Channel MOSFET Transistor manufactured by Inchange Semiconductor. This component is designed for various electronic applications requiring robust performance.

 

Key electrical specifications include a minimum drain-source resistance of 500mΩ and a minimum breakdown voltage of 400V. The device can handle a maximum power dissipation of 125W, making it suitable for power handling tasks. The maximum operating temperature is rated at 150°C, ensuring reliability in demanding thermal environments.

 

This MOSFET is part of the broader category of discrete semiconductor products, specifically within the N-Channel MOSFET subcategory. Its specifications suggest suitability for switching and amplification circuits where high voltage and moderate power handling are necessary.

BUZ326 Quick Information

Product Type: MOSFET Transistor
Canonical Name: BUZ326 N-Channel MOSFET Transistor
Subcategory: N-Channel

BUZ326 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ326 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ326 Features

  • Minimum drain-source resistance of 0.5 ohm.
  • Breakdown voltage of at least 400V.
  • Maximum power dissipation of 125W.
  • Operates up to 150°C maximum temperature.
  • Manufactured by Inchange Semiconductor.

BUZ326 Applications

  • Suitable for high-voltage power switching applications.
  • Used in motor control and inverter circuits.
  • Ideal for high-power load switching.
  • Applicable in industrial power supply systems.

BUZ326 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BUZ326?

The minimum breakdown voltage for the BUZ326 is 400V.

What is the maximum power dissipation for the BUZ326?

The maximum power dissipation for the BUZ326 is 125W.

What is the maximum operating temperature of the BUZ326?

The maximum operating temperature for the BUZ326 is 150°C.

What is the minimum drain-source resistance of the BUZ326?

The minimum drain-source resistance of the BUZ326 is 500mΩ.

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The BUZ24 is a SIPMOS Power Transistor from Siemens Semiconductor Group. It offers a breakdown voltage of 100V and a drain-source resistance of 60mΩ.
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