KA431AZ-TA
On Semiconductor
The KA431AZ-TA is a voltage reference integrated circuit from On Semiconductor. It features a typical reference voltage of 2.495V and is housed in a TO-92-3 package.
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5,680 pcs
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5680 pcs | On Request | 1 | On Request | On Request | 1733+ | On Request | On Request | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ11 is an N-Channel enhancement mode silicon gate power MOSFET designed for various switching applications. It is suitable for use in switching regulators, converters, motor drivers, and relay drivers, particularly where high speed and low gate drive power are required. This device can be operated directly from integrated circuits.
Key electrical specifications include a Drain to Source Breakdown Voltage of 50V and a Continuous Drain Current of 30A at a case temperature of 30°C. The On-Resistance (r DS(ON)) is specified as 0.040 Ohms. It also features a Pulsed Drain Current of 120A and a Gate to Source Voltage rating of ±20V.
With a Maximum Power Dissipation of 75W at 25°C, the BUZ11 has a linear derating factor of 0.6 W/°C. The operating and storage temperature range is from -55°C to 150°C. The component is housed in a TO-220AB package, which is a through-hole mounting type.
This MOSFET offers nanosecond switching speeds and linear transfer characteristics, making it a versatile component for power electronics designs. Its high input impedance and majority carrier device characteristics further enhance its utility in demanding applications.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 30A at a case temperature of 30°C.
The drain to source breakdown voltage is 50V.
The typical on-resistance is 0.04 Ohms.
The operating and storage temperature range is -55°C to 150°C.
The BUZ11 is available in a TO-220AB package.
