| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
308 pcs
|
308 pcs | On Request | 2 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ11 is an N-Channel enhancement mode silicon gate power MOSFET designed for various switching applications. It features a drain-to-source breakdown voltage of 50V and a continuous drain current of 30A. The low on-resistance of 0.040 Ohm at a gate-source voltage of 10V and drain current of 15A makes it suitable for applications requiring high efficiency.
This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors. It requires high speed and low gate drive power, and can be operated directly from integrated circuits. The device comes in a TO-220AB package, suitable for through-hole mounting.
Key electrical characteristics include a maximum power dissipation of 75W at 25°C, with a linear derating factor of 0.6W/°C. The operating and storage temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage for the BUZ11 is 50V.
The BUZ11 has a continuous drain current rating of 30A.
The typical on-resistance (Rds(on)) of the BUZ11 is 0.04 Ohms.
The BUZ11 is supplied in a TO-220AB package.
The BUZ11 can operate in a temperature range of -55°C to 150°C.