| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Continuous Forward Current | |
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The RCA 1N1200A is a silicon standard recovery diode belonging to the 1N1199A thru 1N1206AR series. This diode is designed for applications requiring high surge capability and is housed in a DO-4 package.
Key electrical characteristics include a repetitive peak reverse voltage (VRRM) ranging from 50V to 600V, an RMS reverse voltage (VRMS) up to 420V, and a DC blocking voltage (VDC) of up to 600V. The continuous forward current (IF) is rated at 12A under a case temperature of 150°C. It exhibits a typical forward voltage (VF) of 1.1V at 12A and a maximum reverse leakage current (IR) of 10µA at 50V and 175°C.
Thermal performance is supported by a junction-to-case thermal resistance (RthJC) of 2.00 °C/W. The operating and storage temperature range for this diode is -55°C to 150°C. The diode is not ESD sensitive and offers high surge capability.
This component is suitable for various power rectification applications where robust performance and high surge handling are necessary. The DO-4 package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage for the 1N1200A is 600 V.
The continuous forward current of the 1N1200A is 12 A, measured at a case temperature of 150 °C.
The typical forward voltage of the 1N1200A is 1.1 V, measured at a forward current of 12 A and a junction temperature of 25 °C.
The 1N1200A is supplied in a DO-4 package.
The operating temperature range for the 1N1200A is -55 °C to 150 °C.
The maximum surge non-repetitive forward current for the 1N1200A is 200 A, under specified test conditions.
The thermal resistance from junction to case for the 1N1200A is typically 2 °C/W.