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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT70 is a Multiepitaxial planar NPN transistor from STMicroelectronics, housed in a TO-218 plastic package. It is engineered for high frequency and efficiency converters, making it suitable for applications such as switching regulators and motor control.
Key electrical characteristics include a high collector-emitter voltage rating of 200V (V BE = -1.5V) and a sustaining voltage of 125V (I B = 0). It boasts a high continuous emitter current capability of 40A (RMS) and a peak current of 120A. The transistor also features a low saturation voltage, with VCE(sat) typically 0.9V at 70A/7A, and a very low saturation voltage of 1.2V at 35A/1.75A and 100°C.
With a total power dissipation of 200W at T case < 25°C and a low thermal resistance of 0.63°C/W, the BUT70 is designed for demanding power applications. Its fast switching speed is demonstrated by a rise time of 1.8µs and a fall time of 0.35µs under specific inductive load conditions.
The TO-218 package is designed for through-hole mounting, facilitating integration into various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V BE = -1.5V) for the BUT70 is 200V.
The continuous emitter current rating (RMS) for the BUT70 is 40A.
The total power dissipation for the BUT70 at T case < 25°C is 200W.
The thermal resistance junction-to-case for the BUT70 is a maximum of 0.63°C/W.
The BUT70 transistor is supplied in a TO-218 package.
