| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT18AF is a silicon diffused NPN power transistor designed for high-voltage and high-speed applications. It features a glass-passivated construction and is housed in a SOT186 package with an electrically isolated mounting base.
Key electrical specifications include a collector-emitter peak voltage (VCESM) of 1000V and a collector-emitter voltage (VCEO) of 450V. The continuous collector current (IC) is rated at 6A, with a peak collector current (ICM) of 12A. The collector-emitter saturation voltage (VCEsat) is a maximum of 1.5V at 4A collector current and 800mA base current. The total power dissipation (Ptot) is 33W at 25°C ambient temperature when mounted with heatsink compound.
This transistor is suitable for applications such as converters, inverters, switching regulators, and motor control systems. Its high-voltage and high-speed characteristics make it a versatile component for power electronics designs. The SOT186 package facilitates easy mounting and thermal management, especially when used with a heatsink.
Thermal characteristics include a typical thermal resistance from junction to heatsink (Rth j-h) of 3.65 K/W when mounted with heatsink compound. The isolation voltage from all terminals to the external heatsink is rated at a peak of 1500V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUT18AF is 450V.
The peak collector current (ICM) for the BUT18AF is 12A.
The total power dissipation (Ptot) for the BUT18AF is 33W at 25°C when mounted with heatsink compound.
The BUT18AF is supplied in a SOT186 package.
Typical applications for the BUT18AF include converters, inverters, switching regulators, and motor control systems.