| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,800 pcs
|
12800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1128+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOTF4185 from AOS is a 40V P-Channel MOSFET that utilizes advanced trench technology for low on-resistance. This device is particularly well-suited for applications such as load switching and battery protection circuits.
Key electrical characteristics include a Drain-Source Breakdown Voltage (VDS) of -40V and a continuous Drain Current (ID) of -34A at 25°C. The Static Drain-Source On-Resistance (RDS(ON)) is as low as 16mΩ at a gate-source voltage of -10V and 20mΩ at -4.5V, ensuring efficient power handling.
This MOSFET operates within a junction and storage temperature range of -55°C to 175°C. It is packaged in a TO220F package, suitable for through-hole mounting. The device also offers features like 100% UIS Tested and 100% Rg Tested, indicating robust performance and reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the AOTF4185 is -40V.
The typical on-resistance (RDS(ON)) of the AOTF4185 at VGS=-10V is less than 16mΩ.
The continuous drain current (ID) of the AOTF4185 at 25°C is -34A.
The AOTF4185 is supplied in a TO220F package.
The junction and storage temperature range for the AOTF4185 is -55°C to 175°C.