| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation |
The BUP309 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Siemens Semiconductor Group. This component is rated for a maximum collector current of 25A and a collector emitter voltage of 1.7kV. It offers a power dissipation capability of 310W and has a maximum operating temperature of 150°C.
The IGBT features a fall time of 80ns and a collector emitter saturation voltage of 4.2V. It has 3 terminals and is designed for through-hole mounting.
This device is suitable for applications requiring high voltage and current switching capabilities. Its robust design and specifications make it a reliable choice for power electronics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUP309 has a maximum collector current of 25A.
The collector emitter voltage for the BUP309 is 1.7kV.
The BUP309 has a power dissipation of 310W.
The BUP309 can operate up to a maximum temperature of 150°C.
The BUP309 has 3 terminals.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.