| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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320 pcs
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320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microsemi APT8075BNG is a high voltage N-Channel enhancement mode power MOSFET from the Power MOS IV family. It is designed for high-performance applications requiring robust power handling capabilities.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 13A at 25°C. The typical on-state resistance (Rds(on)) is 0.75 Ohms. The device supports a gate-source voltage (Vgs) of up to ±30V and has a maximum power dissipation (Pd) of 310W.
This MOSFET is housed in a TO-247 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The APT8075BNG is part of a new generation of high voltage power MOSFETs offering improved performance for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V_DSS) is 800V.
The continuous drain current at 25°C case temperature is 13A.
The typical on-state resistance (R_DS(on)) is 0.75Ω.
It is available in a TO-247 through-hole package.
The maximum gate-source voltage is ±30V.